? 2013 ixys corporation, all rights reserved IXYN120N120C3 v ces = 1200v i c110 = 120a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.20v t fi(typ) = 96ns ds100560(9/13) high-speed igbts for 20-50 khz switching features ? optimized for low switching losses ? square rbsoa ? minibloc, with aluminium nitride isolation ? international standard package ? isolation voltage 2500 v~ ? positive thermal coefficient of vce(sat) ? avalanche rated ? high current handling capability advantages ? high power density ? low gate drive requirement applications ? high frequency power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 1200 v v ge(th) i c = 500 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 1.5 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.55 3.20 v t j = 150 ? c 3.40 v symbol test conditions maximum ratings v ces t j = 25c to 175c 1200 v v cgr t j = 25c to 175c, r ge = 1m ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 240 a i lrms terminal current limit 200 a i c110 t c = 110c 120 a i cm t c = 25c, 1ms 700 a i a t c = 25c 60 a e as t c = 25c 2 j ssoa v ge = 15v, t vj = 150c, r g = 1 ? i cm = 240 a (rbsoa) clamped inductive load v ce ? v ces p c t c = 25c 1200 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c v isol 50/60hz t = 1min 2500 v~ i isol ?? 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in terminal connection torque 1.3/11.5 nm/lb.in weight 30 g 1200v xpt tm igbts genx3 tm advance technical information sot-227b, minibloc g = gate, c = collector, e = emitter ? either emitter terminal can be used as main or kelvin emitter g e ? e ? c e153432 e
ixys reserves the right to change limits, test conditions, and dimensions. IXYN120N120C3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 40 68 s c ie s 9850 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 580 pf c res 218 pf q g(on) 412 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 73 nc q gc 180 nc t d(on) 35 ns t ri 77 ns e on 6.75 mj t d(off) 176 ns t fi 96 ns e of f 5.10 mj t d(on) 33 ns t ri 72 ns e on 10.30 mj t d(off) 226 ns t fi 120 ns e off 7.20 mj r thjc 0.125 c/w r thcs 0.05 c/w inductive load, t j = 25c i c = 100a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 ? note 2 inductive load, t j = 150c i c = 100a, v ge = 15v v ce = 0.5 ? v ces , r g = 1 ? note 2 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. sot-227b minibloc (ixyn)
? 2013 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 00.5 11.522.533.544.55 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 7v 8v 6v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 02468101214161820 v ce - volts i c - amperes v ge = 15v 12v 11v 8v 9v 6v 7v 10v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 01234567 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 8v 7v 6v 9v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 60a i c = 240a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 6789101112131415 v ge - volts v ce - volts i c = 240a t j = 25oc 120a 60a fig. 6. input admittance 0 40 80 120 160 200 240 280 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc IXYN120N120C3
ixys reserves the right to change limits, test conditions, and dimensions. IXYN120N120C3 fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. maximum transient thermal impedance aaaaa 0.2 fig. 7. transconductance 0 20 40 60 80 100 120 140 0 50 100 150 200 250 300 i c - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 100 300 500 700 900 1100 1300 v ce - volts i c - amperes t j = 150oc r g = 1 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v ge - volts v ce = 600v i c = 120a i g = 10ma fig. 9. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 2 3 4 5 6 7 8 9 10 12345678910 r g - ohms e off - millijoules 2 4 6 8 10 12 14 16 18 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 15. inductive turn-off switching times vs. gate resistance 60 80 100 120 140 160 180 200 12345678910 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 700 800 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 100a i c = 50a fig. 13. inductive switching energy loss vs. collector current 1 2 3 4 5 6 7 8 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on - - - - r g = 1 ? ????? v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 1 2 3 4 5 6 7 8 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on - - - - r g = 1 ? ???? v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. collector current 20 40 60 80 100 120 140 160 180 200 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanoseconds 140 160 180 200 220 240 260 280 300 320 t d(off) - nanoseconds t f i t d(off) - - - - r g = 1 ? ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 70 80 90 100 110 120 130 140 150 160 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 140 160 180 200 220 240 260 280 300 320 t d(off) - nanoseconds t f i t d(off) - - - - r g = 1 ? ? , v ge = 15v v ce = 600v i c = 100a i c = 50a IXYN120N120C3
ixys reserves the right to change limits, test conditions, and dimensions. IXYN120N120C3 ixys ref: ixy_120n120c3(9p-c91) 9-09-13 fig. 19. inductive turn-on switching times vs. collector current 20 30 40 50 60 70 80 90 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanoseconds 30 31 32 33 34 35 36 37 t d(on) - nanoseconds t r i t d(on) - - - - r g = 1 ? ? , v ge = 15v v ce = 600v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 28 30 32 34 36 38 40 t d(on) - nanoseconds t r i t d(on) - - - - r g = 1 ? ? , v ge = 15v v ce = 600v i c = 100a i c = 50a fig. 18. inductive turn-on switching times v s. gate resistance 0 20 40 60 80 100 120 140 160 12345678910 r g - ohms t r i - nanoseconds 20 28 36 44 52 60 68 76 84 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 21. maximum peak load current vs. frequency 0 10 20 30 40 50 60 70 80 90 100 110 120 10 100 1,000 f max - kilohertzs i c - amperes t j = 150oc t c = 75oc v ce = 600v v ge = 15v r g = 1 ? d = 0.5 square wave triangular wave
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